Amplification-type cmos image sensor

ABSTRACT

Pixels are two-dimensionally arranged into rows and columns in an image sensing region of a solid-state image sensing device, and divided into a plurality of vertical blocks. A vertical signal line is connected to each pixel column. A voltage read out from a pixel is A/D-converted and held in a holding circuit. A vertical block selection circuit outputs a vertical block selection signal in response to a horizontal sync pulse. An intra-block line selection circuit selects one pixel row in one block or simultaneously selects a plurality of pixel rows in one block, in accordance with the selection signal and a signal for setting the number of lines to be selected. A pulse selector circuit supplies a pixel driving pulse signal to a pixel row selected by the intra-block line selection circuit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application based on U.S. applicationSer. No. 11/612,115, filed Dec. 18, 2006 and is based upon and claimsthe benefit of priority from prior Japanese Patent Application No.2005-365051, filed Dec. 19, 2005, the entire contents of each of whichare incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state image sensing device suchas a CMOS image sensor, and is applied to, e.g., a cell phone with animage sensor, a digital camera, and a video camera.

2. Description of the Related Art

A CMOS image sensor is used in, e.g., a cell phone with an image sensor,a digital camera, and a video camera. A CMOS image sensor of this typeperforms a noise reducing operation (called CDS: Correlated DoubleSampling) during analog-to-digital conversion of a readout signalcharge. Also, the CMOS image sensor includes two stages of A/Dconverters in order to perform high-accuracy A/D conversion.Furthermore, a shift register circuit or decoder circuit is generallyused as a vertical line selection circuit (e.g., Japanese Patent No.3361005).

The CMOS image sensor as described above performs a thinning operationwhich reads two pixel lines and skips two pixel lines arranged in thevertical direction during a monitoring operation for reducing the numberof pixels. When this thinning operation is performed, however, samplingpoints of G signals (a Gr signal and Gb signal) for generating aluminance signal become discontinuous in a color sensor having a Bayerpattern, so a spurious signal deteriorates the image quality.

As a measure to cope with this deterioration in image quality cause by aspurious signal, Jpn. Pat. Appln. KOKAI Publication No. H09-247535 hasproposed a technique which averages vertical signals by usingcapacitors. However, the addition of the capacitors increases thepattern occupation area, or buffer circuits formed in one-to-onecorrespondence with the capacitors increase the power consumption.

Accordingly, demands have arisen for a solid-state image sensing devicecapable of preventing the deterioration in image quality caused by aspurious signal without increasing the pattern occupation area or powerconsumption.

BRIEF SUMMARY OF THE INVENTION

A solid-state image sensing device according to an aspect of the presentinvention comprises an image sensing region in which pixels aretwo-dimensionally arranged into rows and columns on a semiconductorsubstrate, the pixel comprising a photoelectric conversion circuitconfigured to convert an optical signal into a signal charge and storethe signal charge, a read circuit configured to read out the electriccharge stored in the photoelectric conversion circuit to a detectingportion, an amplification circuit configured to amplify and output avoltage corresponding to an amount of electric charge in the detectingportion, and a reset circuit configured to reset the electric charge inthe detecting portion, a vertical signal line connected to each pixelcolumn in the image sensing region, a variable load circuit connected tothe vertical signal line, and configured to increase an electric currentflowing through the vertical signal line when a plurality of pixel rowsare simultaneously selected, and a storage circuit configured to holdthe voltage read out to the vertical signal line from each amplificationcircuit in a selected pixel row.

A solid-state image sensing device according to another aspect of thepresent invention comprises an image sensing region in which pixels aretwo-dimensionally arranged into rows and columns on a semiconductorsubstrate, the pixel comprising a photoelectric conversion circuitconfigured to convert an optical signal into a signal charge and storethe signal charge, a read circuit configured to read out the electriccharge stored in the photoelectric conversion circuit to a detectingportion, an amplification circuit configured to amplify and output avoltage corresponding to an amount of electric charge in the detectingportion, and a reset circuit configured to reset the electric charge inthe detecting portion, a vertical signal line connected to each pixelcolumn in the image sensing region, a storage circuit configured to holda voltage read out to the vertical signal line from each amplificationcircuit in a selected pixel row, and a switch addition circuit formedbetween the image sensing region and the storage circuit, and configuredto connect a plurality of vertical signal lines to an input terminal ofthe storage circuit and add data read out from a plurality of pixels.

A solid-state image sensing device according to still another aspect ofthe present invention comprises an image sensing region in which pixelsare two-dimensionally arranged into rows and columns on a semiconductorsubstrate, the pixel comprising a photoelectric conversion circuitconfigured to convert an optical signal into a signal charge and storethe signal charge, a read circuit configured to read out the electriccharge stored in the photoelectric conversion circuit to a detectingportion, an amplification circuit configured to amplify and output avoltage corresponding to an amount of electric charge in the detectingportion, and a reset circuit configured to reset the electric charge inthe detecting portion, a vertical signal line connected to each pixelcolumn in the image sensing region, an analog-to-digital conversioncircuit configured to perform analog-to-digital conversion on thevoltage read out to the vertical signal line from each amplificationcircuit in a selected pixel row, a holding circuit configured to holddigital data obtained by the analog-to-digital conversion circuit, and aswitch addition circuit formed between the image sensing region and theanalog-to-digital conversion circuit, and configured to connect aplurality of vertical signal lines to an input terminal of theanalog-to-digital conversion circuit and add data read out from aplurality of pixels, the switch addition circuit comprising a firstsynthesizing switch whose current path is connected between the verticalsignal line and an input terminal of the analog-to-digital conversioncircuit, and a second synthesizing switch whose current path isconnected between the vertical signal line and an input terminal, whichis different from the input terminal connected to the first synthesizingswitch, of the analog-to-digital conversion circuit, wherein when thesecond synthesizing switch is turned on, a portion of theanalog-to-digital conversion circuit connected to the secondsynthesizing switch is stopped.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a circuit diagram which explains a solid-state image sensingdevice according to the first embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor;

FIG. 2 is a circuit diagram showing examples of the arrangements of aintra-block line selection circuit and pulse selector circuit in thecircuit shown in FIG. 1;

FIG. 3 is a timing chart showing standard sensor operation timings inthe circuit shown in FIG. 1;

FIG. 4 is a timing chart showing operation timings when reducing thenumber of pixels in the circuit shown in FIG. 1;

FIG. 5 is a circuit diagram which explains a solid-state image sensingdevice according to the second embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor;

FIG. 6 is a circuit diagram which explains a solid-state image sensingdevice according to the third embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor;

FIG. 7 is a circuit diagram which explains a solid-state image sensingdevice according to the fourth embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor; and

FIG. 8 is a circuit diagram which explains a modification of the presentinvention, and shows another example of the arrangement of a variableload circuit.

DETAILED DESCRIPTION OF THE INVENTION First Embodiment

FIG. 1 is a circuit diagram which explains a solid-state image sensingdevice according to the first embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor. In an image sensing region 11, unit cells 12-11, 12-12, . . . ,12-mn as pixels are two-dimensionally arranged into m rows×n columns.FIG. 1 shows details of 4 rows×4 columns in the image sensing region 11.The image sensing region 11 is divided into a plurality of blocks in thevertical direction. Vertical signal lines VLIN1, VLIN2, VLIN3, . . . areconnected to the individual unit cell columns in the image sensingregion 11.

In one end (the upper portion) of the image sensing region 11, loadtransistors TLM1, TLM2, TLM3, . . . for a source follower circuit arearranged in the horizontal direction. The current path of each of theload transistors TLM1, TLM2, TLM3, . . . is connected between one end ofa corresponding one of the vertical signal lines VLIN1, VLIN2, VLIN3, .. . and the ground point. A bias circuit 21 applies a bias voltage VTLto the gates of the load transistors TLM1, TLM2, TLM3, . . . . The loadtransistors TLM1, TLM2, TLM3, . . . and the bias circuit 21 function asa variable load circuit.

The bias circuit 21 includes resistors R1 to R3 and a switch SW1. Theresistors R1 to R3 are connected in series between a power supply VDDand the ground point. The switch SW1 selects, as the bias voltage VTL, ahigh voltage (H) at the connection node between the resistors R1 and R2or a low voltage (L) at the connection node between the resistors R2 andR3 in response to a signal PMONI. Since this changes the ON resistance(conduction resistance) of the load transistors TLM1, TLM2, TLM3, . . ., the amount of electric current flowing through the vertical signallines VLIN1, VLIN2, VLIN3, . . . can be changed.

In a normal operation, the switch SW1 selects the low voltage (L) at theconnection node between the resistors R2 and R3, and supplies the lowvoltage (L) as the bias voltage VTL to the gates of the load transistorsTLM1, TLM2, TLM3, . . . . Consequently, the conduction resistance of theload transistors TLM1, TLM2, TLM3, . . . increases, and the amount ofelectric current flowing through the vertical lines VLIN1, VLIN2, VLIN3,. . . decreases.

On the other hand, when a plurality of pixel rows are simultaneouslyselected, the switch SW1 selects the high voltage (H) at the connectionnode between the resistors R1 and R2, and supplies the high voltage (H)as the bias voltage VTL to the gates of the load transistors TLM1, TLM2,TLM3, . . . . Therefore, the conduction resistance of the loadtransistors TLM1, TLM2, TLM3, . . . decreases, and the amount ofelectric current flowing through the vertical lines VLIN1, VLIN2, VLIN3,. . . increases.

The other ends (lower portions) of the vertical signal lines VLIN1,VLIN2, VLIN3, . . . are connected to a column-type noise cancelingcircuit and analog-to-digital converter (CDS & ADC) 13, a latch circuit14 which latches a signal having undergone analog-to-digital conversion,a line memory (10 bits) 15 for storing the latched signal, and ahorizontal shift register circuit 16 for reading out the signal from theline memory 15. A circuit unit 17 formed by, e.g., the latch circuit 14,line memory 15, and horizontal shift register circuit 16 act as aholding circuit which holds digital data obtained by the CDS & ADC 13.Also, the circuit unit 17 and CDS & ADC 13 function as a storage circuitwhich holds a voltage read out to the vertical signal line from eachamplification circuit in a selected pixel row.

A vertical block selection circuit 18, intra-block line selectioncircuit 19, and pulse selector circuit 20 are formed adjacent to theimage sensing region 11. The pulse selector circuit 20 supplies pulsesignals ADRES1, ADRES2, . . . , RESET1, RESET2, . . . , and READ1,READ2, . . . to the individual rows of unit cells.

That is, block selection signals Vblock1, Vblock2, . . . output from thevertical block selection circuit 18 select blocks in the image sensingregion 11. The vertical block selection circuit 18 is formed by a shiftregister circuit or decoder circuit. The intra-block line selectioncircuit 19 selects unit cell rows (pixel rows) in the block selected bythe vertical block selection circuit 18, on the basis of signals BLine1to BLine4. The intra-block line selection circuit 19 can be formed byusing a plurality of AND circuits. The intra-block line selectioncircuit 19 selects the presence/absence of averaging or the number oflines to be averaged by a High-level combination of the pulse signalsBLine1 to BLine4. The pulse selector circuit 20 generates the signalsRESET1, READ1, and ADRES1, signals RESET2, READ2, and ADRES2, andsignals RESET3, READ3, and ADRES3, . . . on the basis of the outputsignal from the intra-block line selection circuit 19 and pixel drivingpulse signals RESET, READ, and ADRES, and selects unit cell rows bythese signals.

As described above, vertical averaging can be easily selected byseparating a vertical (row) pixel driving pulse generator into the threecircuits, i.e., the vertical block selection circuit 18, intra-blockline selection circuit 19, and pulse selector circuit 20.

Each of the unit cells 12-11, 12-12, . . . comprises four transistors (arow selection transistor Ta, an amplification transistor Tb as anamplification circuit, a reset transistor Tc as a reset circuit, and aread transistor Td as a read circuit) and a photodiode (photoelectricconversion circuit) PD. In the unit cell 12-11, for example, the currentpaths of the transistors Ta and Tb are connected in series between thepower supply VDD and vertical signal line VLIN1. The gate of thetransistor Ta receives the pulse signal ADRES1. The current path of thetransistor Tc is connected between the power supply VDD and the gate (adetecting portion FD) of the transistor Tb, and the gate of thetransistor Tc receives the pulse signal RESET1. One end of the currentpath of the transistor Td is connected to the detecting portion FD, andthe gate of the transistor Td receives the pulse signal (read pulse)READ1. The cathode of the photodiode PD is connected to the other end ofthe current path of the transistor Td, and the anode of the photodiodePD is grounded.

The CDS & ADC 13 includes capacitors C11, C12, C13, . . . and C21, C22,C23, . . . as a noise canceller, transistors TS11, TS12, TS13, . . . fortransmitting signals of the vertical signal lines VLIN1, VLIN2, VLIN3, .. . , transistors TS21, TS22, TS23, . . . for setting the inputthreshold voltages of comparator circuits, and two stages of comparatorcircuits COMP11, COMP12, COMP12, COMP13, . . . and COMP21, COMP22,COMP23, . . . .

One end of the current path of each of the transistors TS11, TS12, TS13,. . . is connected to a corresponding one of the vertical signal linesVLIN1, VLIN2, VLIN3, . . . , and the gates of the transistors TS11,TS12, TS13, . . . receive a pulse signal S1 output from a timinggenerator (not shown). One electrode of each of the capacitors C11, C12,C13, . . . and one electrode of each of the capacitors C21, C22, C23, .. . are connected to the other end of the current path of acorresponding one of the transistors TS11, TS12, TS13, . . . . Anamplification circuit AMP supplies a reference voltage VREF (triangularwave) for comparison of the analog-to-digital converter (ADC) to theother electrodes of the capacitors C11, C12, C13, . . . . The otherelectrode of each of the capacitors C11, C12, C13, . . . is connected toa corresponding one of the input terminals of the comparator circuitsCOMP11, COMP12, COMP13, . . . .

The comparator circuits COMP11, COMP12, COMP13, . . . respectivelycomprise inverters INV11, INV12, INV13, . . . , and the transistorsTS21, TS22, TS23, . . . having current paths respectively connectedbetween the input terminals and output terminals of the inverters INV11,INV12, INV13, . . . . The comparator circuits COMP21, COMP22, COMP33, .. . respectively comprise inverters INV21, INV22, INV23, . . . , andtransistors TS31, TS32, TS33, . . . having current paths respectivelyconnected between the input terminals and output terminals of theinverters INV21, INV22, INV23, . . . . Capacitors C31, C32, C33, . . .are respectively connected between the comparator circuits COMP11,COMP12, COMP13, . . . and COMP21, COMP22, COMP23, . . . . The gates ofthe transistors TS21, TS22, TS23, . . . receive a pulse signal S2, andthe gates of the transistors TS31, TS32, TS33, . . . receive a pulsesignal S3.

The latch circuit 14 latches digital signals output from the comparatorcircuits COMP21, COMP22, COMP23, . . . . The latch circuit 14 isconnected to the line memory 15 for reaching out the latched signals,and the horizontal shift register circuit 16. The line memory 15 outputsa 10-bit digital signal.

FIG. 2 is a circuit diagram showing examples of the arrangements of theintra-block line selection circuit 19 and pulse selector circuit 20 inthe circuit shown in FIG. 1, and shows a logic configuration foraveraging two vertical lines. In this example, both the intra-block lineselection circuit 19 and pulse selector circuit 20 are implemented byAND circuits. To simplify the explanation, this circuit diagram includesonly AND gates. Actual logic circuits are not limited to AND gates. Theintra-block line selection circuit 19 comprises AND gates 30-1 to 30-4.One input terminal of each of the AND gates 30-1 to 30-4 receives thesignal Vblock1 output from the vertical block selection circuit 18, andthe other input terminal of each of the AND gates 30-1 to 30-4 receivesa corresponding one of the signals BLine1 to BLine4. The AND gates 30-1to 30-4 supply output signals to the pulse selector circuit 20.

The intra-block line selection circuit 19 selects one pixel row in onevertical block or simultaneously selects a plurality of pixel rows inone vertical block, on the basis of the vertical block selection signalVblock1 output from the vertical block selection circuit 18, and thesignals BLine1 to BLine4 for setting the number of lines to be selected.In the example shown in FIG. 2, one to four lines in a block selected bythe selection signal Vblock1 can be simultaneously selected inaccordance with a combination of the levels of the signals BLine1 toBLine4.

The pulse selector circuit 20 includes AND gates 31-1 to 31-4, 32-1 to32-4, and 33-1 to 33-4. One input terminal of each of the AND gates31-1, 32-1, and 33-1 receives the output signal from the AND gate 30-1,the other input terminal of each of the AND gates 31-1, 32-1, and 33-1receives a corresponding one of the pixel driving pulse signals ADRES,RESET, and READ, and the AND gates 31-1, 32-1, and 33-1 respectivelyoutput the pulse signals ADRES1, RESET1, and READ1. One input terminalof each of the AND gates 31-2, 32-2, and 33-2 receives the output signalfrom the AND gate 30-2, the other input terminal of each of the ANDgates 31-2, 32-2, and 33-2 receives a corresponding one of the pixeldriving pulse signals ADRES, RESET, and READ, and the AND gates 31-2,32-2, and 33-2 respectively output the pulse signals ADRES2, RESET2, andREAD2. One input terminal of each of the AND gates 31-3, 32-3, and 33-3receives the output signal from the AND gate 30-3, the other inputterminal of each of the AND gates 31-3, 32-3, and 33-3 receives acorresponding one of the pixel driving pulse signals ADRES, RESET, andREAD, and the AND gates 31-3, 32-3, and 33-3 respectively output thepulse signals ADRES3, RESET3, and READ3. One input terminal of each ofthe AND gates 31-4, 32-4, and 33-4 receives the output signal from theAND gate 30-4, the other input terminal of each of the AND gates 31-4,32-4, and 33-4 receives a corresponding one of the pixel driving pulsesignals ADRES, RESET, and READ, and the AND gates 31-4, 32-4, and 33-4respectively output the pulse signals ADRES4, RESET4, and READ4.

FIG. 3 is a timing chart showing standard sensor operation timings inthe circuits shown in FIGS. 1 and 2. The output signals Vblock1 andVblock2 from the vertical block selection circuit 18 sequentially changeto High level at a period of 4H in response to a horizontal sync pulseHP (one horizontal period is H). The intra-block line selection circuit19 receives the signals BLine1, BLine2, BLine3, and BLine4 insynchronism with the horizontal sync pulse HP. The signals BLine1,BLine2, BLine3, and BLine4 sequentially change to High level at a periodof 1H.

The pulse selector circuit 20 receives the pixel driving pulse signalsRESET, READ, and ADRES, and supplies the logical products (pulse signalsRESET1, RESET2, RESET3, . . . , READ1, READ2, READ3, . . . , and ADRES1,ADRES2, ADRES3, . . . ) of these signals and the output signals from theintra-block line selection circuit 19 to the unit cell rows (pixel rows)in the image sensing region 11. In this case, the pulse signals ADRES1,RESET1, and READ1 of vertical line 1 output from the pulse selectorcircuit 20 first change to High level. Since the pulse signal ADRES1changes to High level, the source follower circuit comprising theamplification transistor Tb and load transistor TLM1 operates. Aphotoelectrically converted signal charge is stored in the photodiode PDfor a predetermined period, the pulse signal RESET1 is set at High levelin order to remove a noise signal such as a dark current from thedetecting portion FD before reading out the stored signal charge, andthe detecting portion FD is set at a power supply voltage VDD (=2.8 V).When the pulse signal RESET1 changes to Low level after that, a voltage(reset level) is output to the vertical signal line VLIN1 with no signalin the detecting portion FD as a reference. This signal is stored in thecapacitor C21. Then, the transistor Td is turned on by changing thepulse signal READ1 to High level, and the signal charge stored in thephotodiode PD is read out to the detecting portion FD. As a consequence,the voltage (signal+reset) level of the detecting portion FD is read outto the vertical signal line VLIN1. This signal is stored in thecapacitor C11. When the pulse signal READ1 changes to Low level afterthat, the reference voltage VREF is changed to convert the analog signalinto a digital signal by using the threshold voltage of the comparatorcircuit COMP11. In this case, the analog signal is supplied to theconnection node between the capacitors C11 and C21, and the reset levelcan be removed from the analog signal because the polarity of the resetlevel of the capacitor C21 is reversed.

The signals to be supplied to the unit cell rows (pixel rows) in theimage sensing region 11 are sequentially output in synchronism with thehorizontal sync pulse HP. Both the reset-level voltage and the voltage(signal+reset level) of the detecting portion are input to one electrodeof each of the capacitors C11, C12, C13, . . . and C21, C22, C23, . . .in a period during which the pulse signal S1 is High level, and held inthe circuit unit 17 comprising, e.g., the latch circuit 14, line memory15, and horizontal shift register 16.

FIG. 4 is a timing chart showing the timings of an operation of reducingthe number of pixels in the circuit shown in FIG. 1. In this example,every two vertical lines are read in order. In the vertical blockselection circuit 18, the signals Vblock1, Vblock2, . . . sequentiallychange to High level at a period of 2H in response to the horizontalsync pulse HP. The intra-block line selection circuit 19 receives thesignals BLine1, BLine2, BLine3, and BLine4 in synchronism with thehorizontal sync pulse HP. An operation in which the signals BLine1 andBLine3 simultaneously change to High level and the signals BLine2 andBLine4 simultaneously change to High level in the next period H isrepeated. The pulse selector circuit 20 receives the pixel drivingpulses RESET, READ, and ADRES, and supplies, to the pixel rows, signalsobtained by ANDing these pulses and the output signals from theintra-block line selection circuit 19. Therefore, the signals RESET1 andRESET3, READ1 and READ3, and ADRES1 and ADRES3 change to High level atthe same time.

In the next period H, the signals RESET2 and RESET4, READ2 and READ4,and ADRES2 and ADRES4 change to High level at the same time. Thisoperation is repeated in the order of blocks. Both the reset-levelvoltage of two vertical lines and the voltage (signal+reset level) ofthe detecting portion are input to one electrode of each of thecapacitors C11, C12, C13, . . . and C21, C22, C23, . . . in a periodduring which the pulse signal S1 is High level. In this example,averaging is performed every other line in order to average the samecolor in a color sensor having a Bayer pattern.

The solid-state image sensing device according to the first embodimentimplements averaging by the resistance by using the output impedance ofthe source follower circuit. In this case, the load transistors TLM1,TLM2, TLM3, . . . become common by receiving the common bias voltageVTL. When the number of vertical lines to be averaged is 2 (i.e., thenumber of ADRES lines to be simultaneously turned on is 2), theoperating point is pulled to the power supply side, and this reduces theoperation margin. As a countermeasure, the signal PMONI controlsswitching by the switch SW1 to raise the bias voltage VTL. Since the ONresistance of the load transistors TLM1, TLM2, TLM3, . . . decreases,the operating point can be pulled back to the ground point (GND) side.That is, the operation margin lowered because the averaging operationhas shifted the operating point of the vertical signal line to the powersupply side is shifted to the ground point side by raising the biasvoltage VTL, thereby assuring the same operation margin as theconventional operation margin. It is also possible to improve theresponse of the vertical signal line by raising the bias voltage VTL,thereby increasing the speed of a binning operation.

The resistance averaging method as described above does not increase thenumber of capacitors and requires no buffer circuit. In addition, thecircuit scale of the vertical block selection circuit 18 need only be ¼the conventional circuit. Also, the averaging operation using theresistance can average random noise of pixels and noise of the sourcefollower circuit, thereby effectively reducing the noise.

Accordingly, the arrangement and method as described above can averagepixels in the operation of reducing the number of pixels, whilesuppressing the increase in power consumption, without generating anyspurious signal and increasing the pattern occupation area.

Note that the circuit shown in FIG. 2 and its operation have beenexplained by taking two-line averaging as an example. However, theintra-block line selection circuit 19 is readily applicable tothree-line averaging or four-line averaging as well by increasing thenumber of AND circuits and the number of the input pulse signals BLine.

Second Embodiment

FIG. 5 is a circuit diagram which explains a solid-state image sensingdevice according to the second embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor. This circuit shown in FIG. 5 differs from the circuit shown inFIG. 1 in that a horizontal-direction switch addition circuit 40 isformed between an image sensing region 11 and CDS & ADC 13. The switchaddition circuit 40 comprises transistors TSM11, TSM12, TSM13, . . .(first synthesizing switches) and transistors TSM21, TSM22, . . .(second synthesizing switches). The current path of each of thetransistors TSM11, TSM12, TSM13, . . . is connected between the otherend of a corresponding one of vertical signal lines VLIN1, VLIN2, VLIN3,. . . and one end of the current path of a corresponding one oftransistors TS11, TS12, TS13, . . . . The current path of the transistorTSM21 is connected between the other end of the vertical signal lineVLIN3 and one end of the current path of the transistor TS11. Thecurrent path of the transistor TSM22 is connected between the other endof the vertical signal line VLIN4 and one end of the current path of thetransistor TS12.

The gates of the transistors TSM11, TSM12, . . . receive a controlsignal SM1. The gates of the transistors TSM13, TSM14, . . . receive acontrol signal SM2. The gates of the transistors TSM21, TSM22, . . .receive a signal obtained by inverting the control signal SM2 by aninverter INV3. The control signal SM2 is supplied to inverters INV13,INV14, INV23, and INV24 to control the operations of these inverters.

When performing no horizontal averaging in the above arrangement, thecontrol signals SM1 and SM2 are changed to High level. When performinghorizontal averaging, the control signal SM2 is changed to Low levelwhile the control signal SM1 is maintained at High level. Consequently,the transistors TSM13 and TSM14 are turned off, and the transistorsTSM21 and TSM22 are turned on. That is, the outputs from source followercircuits on alternate lines in the horizontal direction are connectedvia the ON resistances of the transistors TSM11 and TSM21, and theaveraged signal is stored in capacitors C11 and C21 via the current pathof the transistor TS11.

In the above horizontal averaging method, a bias voltage VTL can be keptat Low level even if the number of lines to be averaged increases to 2,3, or 4. This is so because transistors TLM1, TLM2, TLM3, . . . arearranged on individual lines, so the bias voltage VTL need not beincreased.

The feature of the horizontal averaging method according to the secondembodiment lies in that power supply to comparator circuits CMP13,CMP14, CMP23, and CMP24 can be stopped by changing the control signalSM2 to Low level. Since only ½ the total number of stages of comparatorcircuits operate, the power consumption can be reduced to ½. It is alsopossible to double the operating speed because the number of horizontalstages to be read can be reduced to ½. In addition, three or fourhorizontal lines can be similarly averaged by increasing the number ofthe horizontal averaging transistors TSM and the number of the controlsignals SM.

Note that averaging in the horizontal direction can also be performed byreading all horizontal pixels and averaging them by digital signalprocessing.

This embodiment implements averaging of pixels by the resistance mixingoperation in the operating of reducing the number of pixels by using theamplification-type CMOS image sensor. This also achieves the featuresthat a spurious signal which is a problem in the conventional thinningoperation is not generated, and the simple circuit can reduce noise.

Third Embodiment

FIG. 6 is a circuit diagram which explains a solid-state image sensingdevice according to the third embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor. This circuit shown in FIG. 6 differs from the circuit shown inFIG. 5 in the circuit configuration of a switch addition circuit. Thatis, transistors TSM31, TSM32, . . . (synthesizing switches) are formedinstead of the transistors TSM11, TSM12, TSM13, . . . , the transistorsTSM21, TSM22, . . . , and the inverter INV3. Also, a control signal SM3is used in place of the control signals SM1 and SM2.

A switch addition circuit 41 comprises the transistors TSM31, TSM32, . .. . The current path of the transistor TSM31 is connected between theother end of each of vertical signal lines VLIN1 and VLIN3. The currentpath of the transistor TSM32 is connected between the other end of avertical signal line VLIN2 and the other end of a vertical signal lineVLIN4. The gates of the transistors TSM31, TSM32, . . . receive thecontrol signal SM3.

When performing no horizontal averaging in the above arrangement, thecontrol signal SM3 is changed to Low level to turn off the transistorsTSM31, TSM32, . . . . When performing horizontal averaging, the controlsignal SM3 is changed to High level. This turns on the transistorsTSM31, TSM32, . . . . That is, the outputs from source follower circuitson alternate lines in the horizontal direction are connected via the ONresistance of the transistor TSM31, and the averaged signal is stored incapacitors C11 and C21 via the current path of a transistor TS11.Simultaneously, the averaged signal is stored in capacitors C13 and C23via the current path of a transistor TS13. Likewise, the average signalis stored in capacitors C12 and C22 via the current path of a transistorTS12, and the averaged signal is stored in capacitors C14 and C24 viathe current path of a transistor TS14.

In this arrangement, therefore, noise mixing in the vertical signallines is reduced by averaging analog signals, and noise mixing from anA/D converter is digitally averaged by digital conversion outputs, sothe noise can be further reduced.

Fourth Embodiment

FIG. 7 is a circuit diagram which explains a solid-state image sensingdevice according to the fourth embodiment of the present invention, andshows an example of the arrangement of an amplification-type CMOS imagesensor. This circuit shown in FIG. 7 differs from the circuit shown inFIG. 6 in the circuit configuration of a switch addition circuit. Aswitch addition circuit 42 comprises transistors TSM31, TSM32, . . .(synthesizing switches) and resistors RM1, RM2, RM3, . . . . Oneterminal of each of the resistors RM1, RM2, . . . is connected to theother end of a corresponding one of vertical signal lines VLIN1, VLIN2,VLIN3, . . . , and the other end of each of the resistors RM1, RM2, . .. is connected to one end of the current path of a corresponding one oftransistors TS11, TS12, TS13, . . . . The current path of the transistorTSM31 is connected between the other terminals of the resistors RM1 andRM3. The current path of the transistor TSM32 is connected between theother terminal of the resistor RM2 and the other terminal of theresistor RM4. The gates of the transistors TSM31, TSM32, . . . receive acontrol signal SM3.

The above arrangement can reduce a signal voltage difference between twostorage portions (the connection node between capacitors C11 and C21 andthe connection node between capacitors C13 and C23) which simultaneouslystore the average output voltage from the vertical signal lines VLIN1and VLIN2, by increasing the resistance value of the resistors RM1, RM2,RM3, . . . , thereby decreasing the ON resistance of the transistorsTSM31, TSM32, . . . . More specifically, the signal voltage differencebetween the two storage portions can be reduced to 1/10 by setting theratio of the ON resistance of the transistors TSM31, TSM32, . . . to theresistance value of RM1, RM2, RM3, . . . to 1:10. Accordingly, thefourth embodiment can further increase the noise reducing effectcompared to the third embodiment.

Note that averaging in the horizontal direction can also be performed byreading all horizontal pixels and averaging them by digital signalprocessing.

Note also that various arrangements are applicable to the variable loadcircuit in the first to fourth embodiments, and an example is anarrangement as shown in FIG. 8. This variable load circuit comprises afirst load transistor TLMa having a current path connected between avertical signal line VLINn and the ground point, a second loadtransistor TLMb having a current path connected in parallel to the firstload transistor TLMa, and a bias circuit 22 configured to selectivelyapply a bias voltage VTL to the gates of the first and second loadtransistors TLMa and TLMb. The bias circuit 22 includes resistors R4 andR5 and a switch SW2. The resistors R4 and R5 are connected in seriesbetween a power supply VDD and the ground point. The switch SW2 suppliesthe voltage VTL of the connection node between the resistors R4 and R5to the gate of the load transistor TLMb, or connects the gate of theload transistor TLMb to the ground point, in response to a signal PMONI.

In a normal operation, the switch SW2 turns off the load transistor TLMbby connecting its gate to the ground point, and applies the bias voltageVTL to only the load transistor TLMa. On the other hand, when aplurality of pixel rows are simultaneously selected, the switch SW2supplies the bias voltage VTL to the second load transistor TLMb to turnit on, thereby increasing the amount of electric current flowing throughthe vertical signal line VLINn. In this manner, the amount of electriccurrent flowing through the vertical signal line VLINn in the normaloperation can be changed from that when a plurality of pixel rows aresimultaneously selected.

Accordingly, even the variable load circuit having the above arrangementcan perform the same operation and achieve substantially the same effectas those of the variable load circuit in the first to fourthembodiments.

Furthermore, instead of the variable load circuit, it is also possibleto use a current amount switching circuit configured to increase theamount of electric current flowing through a vertical signal line when aplurality of pixel rows are simultaneously selected.

As described above, one aspect of the present invention can prevent thedeterioration in image quality caused by a spurious signal withoutincreasing the pattern occupation area or power consumption. It is alsopossible to obtain the pixel noise reducing effect.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A solid-state image sensing device comprising: an image sensingregion in which pixels are two-dimensionally arranged into rows andcolumns on a semiconductor substrate, the pixel comprising aphotoelectric conversion circuit configured to convert an optical signalinto a signal charge and store the signal charge, a read circuitconfigured to read out the electric charge stored in the photoelectricconversion circuit to a detecting portion, an amplification circuitconfigured to amplify and output a voltage corresponding to an amount ofelectric charge in the detecting portion, and a reset circuit configuredto reset the electric charge in the detecting portion; a vertical signalline connected to each pixel column in the image sensing region; astorage circuit configured to hold a voltage read out to the verticalsignal line from each amplification circuit in a selected pixel row; anda switch addition circuit formed between the image sensing region andthe storage circuit, and configured to connect a plurality of verticalsignal lines to an input terminal of the storage circuit and add dataread out from a plurality of pixels.
 2. A solid-state image sensingdevice according to claim 1, further comprising a variable load circuitconnected to the vertical signal line, and configured to increase anelectric current flowing through the vertical signal line when aplurality of pixel rows are simultaneously selected.
 3. A solid-stateimage sensing device according to claim 2, wherein the variable loadcircuit comprises load transistors each having a current path connectedbetween the vertical signal line and a ground point, and a bias circuitconfigured to apply a first bias voltage and a second bias voltage to agate of each load transistor, and the bias circuit applies the firstbias voltage to the gate of each load transistor in a normal operation,and applies the second bias voltage higher than the first bias voltageto decrease a conduction resistance of the load transistor when aplurality of pixel rows are simultaneously selected, thereby increasingan amount of electric current flowing through the vertical signal line.4. A solid-state image sensing device according to claim 1, in which theimage sensing region includes a plurality of vertical blocks where thepixels are two-dimensionally arranged, and which further comprises: avertical block selection circuit configured to output a vertical blockselection signal in response to a horizontal sync pulse; an intra-blockline selection circuit which selects one pixel row in one vertical blockor simultaneously selects a plurality of pixel rows in one verticalblock, on the basis of the vertical block selection signal output fromthe vertical block selection circuit, and a signal for setting thenumber of lines to be selected; and a pulse selector circuit configuredto supply a pulse signal to a pixel row selected by the intra-block lineselection circuit, on the basis of an output signal from the intra-blockline selection circuit and a pixel driving pulse signal.
 5. Asolid-state image sensing device according to claim 1, which furthercomprises an analog-to-digital conversion circuit configured to performanalog-to-digital conversion on the voltage read out to the verticalsignal line from each amplification circuit in the selected pixel row;and a holding circuit configured to hold digital data obtained by theanalog-to-digital conversion circuit.
 6. A solid-state image sensingdevice according to claim 1, further comprising: an analog-to-digitalconversion circuit configured to perform analog-to-digital conversion onthe voltage read out to the vertical signal line from each amplificationcircuit in the selected pixel row; and a holding circuit configured tohold digital data obtained by the analog-to-digital conversion circuit,wherein the switch addition circuit is formed between the image sensingregion and the analog-to-digital conversion circuit, and configured toconnect a plurality of vertical signal lines to an input terminal of theanalog-to-digital conversion circuit and add data read out from aplurality of pixels.